RFM12N40 Overview
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. BRAND RFM12N35 RFM12N40 September 1998.
RFM12N40 Key Features
- 12A, 350V and 400V
- rDS(ON) = 0.500Ω