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RFM12N40 - N-Channel Power MOSFET

Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

  • 12A, 350V and 400V.
  • rDS(ON) = 0.500Ω [ /Title (RFM12 N35, RFM12 N40) /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN Ordering Information PART NUMBER RFM12N35 RFM12N40.

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Datasheet preview – RFM12N40

Datasheet Details

Part number RFM12N40
Manufacturer Intersil
File Size 31.37 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RFM12N40 Datasheet
Additional preview pages of the RFM12N40 datasheet.

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Other Datasheets by Intersil Corporation

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Semiconductor RFM12N35, RFM12N40 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. BRAND RFM12N35 RFM12N40 September 1998 Features • 12A, 350V and 400V • rDS(ON) = 0.500Ω [ /Title (RFM12 N35, RFM12 N40) /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.
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